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FM Transmitter Circuit Providing 500mW Output

Figure:1

Figure 1 

The circuit was designed to produce a 500mW output power transmitter whose signal modulated by FM using four transistors.

  • Transmitter – an electronic device that can produce or amplify a carrier wave signal, modulates it with a significant signal, and radiates the resulting signal from an antenna which are being utilized in television, telecommunications, and radio
  • Frequency Modulation (FM) – transmits its signal or information over a carrier wave by changing its frequency but it can also be taken into account as a special case of phase modulation where the carrier phase modulation is the time integral of the FM modulating signal
  • 2N3904 – NPN device designed for general purpose low power amplifier and switch applications; extends to 100 mA as a switch and to 100 MHz as an amplifier
  • 7001 (NTE123AP) – a small signal bipolar transistor having an N channel polarity; collector emitter voltage of 40 V; collector base voltage of 60 V; DC current gain minimum of 20; collector emitter breakdown voltage of 40 V, and continuous collector current
  • Class D Amplifier – suitable for high power and portable applications because of its high efficiency

Attached to the circuit is a preamplifier input microphone that is developed within the area of 2N3904 transistors having an audio gain that was preset to the threshold of the 5K ohm trim potentiometer. This potentiometer will supply a small percentage of modification which is often used with an uneven control. The oscillation of the circuit is being defined the parallel tuned tank circuit known as the colpitts oscillator which comprises of two voltage dividing ceramic capacitors (5 pF) in series and an inductor. The capacitors have a common connection to the emitter circuit since it is a transistor version but for electron tube version, common connection to the cathode. This tank circuit controls the frequency of the oscillation. The output of the oscillator is supplied to the 3.9 uH inductor which will obtain high impedance when the circuit is tuned to RF frequencies.

Using the values of the circuit components, the frequency will be around 100 MHz. Through the 5 pF capacitor and 10K ohm resistor, the modulation of audio signal is supplied to the tank circuit. The amount of modulation is being managed by the 1N4002, a general purpose rectifier diode. The output stage is functioning as a class D amplifier where the output transistors act as a switch. There is no direct bias or DC voltage applied to the transistor to determine the desired operating point. On the contrary, the RF frequency acquired by the 3.9 uH inductor is just enough to energize this stage. To prevent instability and drastic thermal changes, the 7001 transistor utilizes its emitter resistance and the 1K ohm resistor.

The 2N3904 FET transistors were mainly used as switching transistors for use in pulse and square wave applications, as general purpose amplifier, in flyback converter for auxiliary power and charging applications, simple current limiting power supply, current sensing low side MOSFET driver, in high precision comparator using op-amp, protected high or low side MOSFET driver, and in small signal transistors. The 7001 or NTE123AP Silicon NPN transistor is used in audio amplifier and switch.

FM is commonly used at VHF radio frequencies for high fidelity broadcasts of music and speech. It is also used at intermediate frequencies by all analog VCR systems, including VHS, to record both the luminance and the chrominance portions of the video signal. It can also be used at audio frequencies to synthesize sound.

Class D amplifiers are widely used in audio amplifiers where a much higher frequency pulse modulated signal is achieved by converting analogue signals. Because of this, they are now being used in several audio appliances where quality is not a factor.

Source:www.zen22142.zen.co.uk/Circuits/rf/4txtr.htm

Tags: FM, transmitter, circuit, four, resistors,

Comments on this post:

By rfmania 0Score: 

3 years ago:  I am really wondering wheather it can provide 500mW power... If someone tried this before please share your experinece...

By john lloyd 0Score: 

3 years ago:  Hi, I think that if all components were used according to the design and diagram, the desired output of 500mW can be achieved. We must also consider the status of each component coz they may cause voltage drops if the components are not of good quality. Cheers!

By Hamishs Homebrew 0Score: 

2 years ago:  The oscillator is the key to making it work. The oscillator should be voltage regulated and run at the lowest power level as possible. Say 1mW. This may require a middle RF amplifier to be added as the final amplifier will not have enough gain. At 1mW the final RF amp will require a gain of 27 dB.

By john arigo 0Score: 

2 years ago:  is it possible to employ Class A design on this circuit? what changes should be done?

By Hamishs Homebrew 0Score: 

2 years ago:  Class A design would be possible. The oscillator (left most 7001 transistor)is already running in class A mode. To set the amplier stage (right most 7001 transistor)in class A mode place a resistor between VCC and the base of the 7001 transistor. You will need to bias the 7001 transistor at its maximum current gain for 100MHz to get the most out of this stage. A ferrit bead maybe requires to help stablise the stage. Good luck

By moses 0Score: 

2 years ago:  what determines the noise of this transmitter ckt

By Hassan Shabbir Jhelumi, 0Score: 

1 year ago:  This circuit provides an FM modulated signal with an output power of around 500mW. The input Mic preamp is built around a couple of 2N3904 transistors, audio gain limited by the 5k preset. The oscillator is a colpitts stage, frequency of oscillation governed by the tank circuit made from two 5pF capacitors and the inductor.
Frequency is around 100 MHz with values shown. Audio modulation is fed into the tank circuit via the 5p capacitor, the 10k resistor and 1N4002 controlling the amount of modulation. The oscillator output is fed into the 3.9uH inductor which will have high impedance at RF frequencies. The output stage operates as a class D amplifier, no direct bias is applied but the RF signal developed across the 3.9uH inductor is sufficient to drive this stage. The emitter resistor and 1k base resistor prevent instability and thermal runaway in this stage.

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