Lowest On-Resistance P-Channel Power Fet

p-channel fet low resistance
FET Symbol FET Package

Vishay Intertechnology, Inc. today introduced a new 8 V p-channel TrenchFET® power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the thermally enhanced PowerPAK® SC-70 2 mm by 2 mm footprint area.

The SiA427DJ offers an ultra-low on-resistance of 16 milliohms at 4.5 V, 26 milliohms at 1.8 V, 32 milliohms at 1.5 V, and 95 milliohms at 1.2 V. The closest competing device is a 20 V p-channel power MOSFET with an 8 V gate-to-source rating, offering on-resistance of 25.8 milliohms at a 4.5 V gate drive, 41.1 milliohms at 1.8 V, and 63.2 milliohms at 1.5 V. These values are 36 %, 37 %, and 47 % higher, respectively, than the SiA427DJ. Compared with a typical device in the standard SC-70 package, occupying the same PCB area, the PowerPAK SC-70 can handle 40 % more power dissipation under the same ambient conditions.

The ultra-small PowerPAK SC-70 package of the SiA427DJ is optimized for small handheld electronics. The new device will be used for load switches in portable devices such as cell phones, smart phones, MP3 players, digital cameras, eBooks, and tablet PCs.

For these devices, the lower on-resistance of the SiA427DJ translates into lower conduction losses, thus prolonging battery life between charges. The device’s low on-resistance rating of 1.2 V is ideal for low bus voltages. Applications using a 1.2 V power bus will also benefit from the MOSFET’s low on-resistance at 1.5 V and 1.8 V as power line voltages fluctuate, allowing the SiA427DJ to provide the best overall power savings.

In addition to being 100 % Rg-tested, the MOSFET is halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.

Article Sources: Vishay Press Release, Data Sheet
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